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PuolijohdeteknologiaLaajuus (3 op)

Opintojakson tunnus: TX00AD55

Opintojakson perustiedot


Laajuus
3 op

Osaamistavoitteet

The student knows the crystal lattice of silicon and the simplified energy band structure of the semiconductors. The student knows the fabrication process of semiconductor silicon and the importance of cleanroom. The student knows the difference between the intrinsic and extrinsic semiconductor and knows the doping materials of silicon. He/she can calculate the number of charge carriers in thermal equilibrium using appropriate assumptions and knows also the meaning of Fermi level in semiconductors. The student knows what is the pn junction, how they are made and can calculate some physical values for that junction.

Sisältö

1. Crystal lattices
2. Silicon unit cell
3. Miller indices
4. Fabrication of silicon semiconductors
5. Crystal defects
6. Energy bands and charge carriers in semiconductors,
7. Intrinsic and extrinsic semiconductors; doping
8. Charge carriers in semiconductors
9. Fermi level
10. Excess carriers in semiconductors
11. pn junction

Esitietovaatimukset

Perustiedot kemiasta ovat suositeltavia.

Arviointikriteerit, tyydyttävä (1)

1. The student knows the main steps of the semiconductor manufacturing process, the types of charge carriers in silicon.
2. He/she knows what intrinsic and extrinsic semiconductors are.
3. The student can identify most common crystal defects.

Arviointikriteerit, hyvä (3)

1. The students can calculate the number of charge carriers for intrinsic and extrinsic semiconductor.
2. The students can calculate the electric conductivity for intrinsic and extrinsic semiconductor.
3. The student knows what is the Fermi level.
4. The student knows what is the pn junction.
5. The student can determine the Miller indices.
6. The student knows the definition of the crystal lattice and the unit cell.

Arviointikriteerit, kiitettävä (5)

1. The student knows how the location of Fermi level varies with doping.
2. The student can calculate the location of the Fermi level.
3. The student can calculate the electric conductivity for the excess carriers.
4. The student can calculate the number of atoms in the unit cell.

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